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Co-sputtering of Ni and Pt was proposed for thermal stable Ge MOSFETs on a Ge-on-Si substrate. The thermal stability of Ni germanide was considerably improved compared to the pure Ni germanide by the co-sputtering of Pt along with Ni, because Pt atoms distributed uniformly in the Ni germanide layer, which suppressed the agglomeration of Ni germanide. Therefore, the proposed Ni-Pt co-sputtering method...
In this study, thermal stability of Ni germanide on Ge-onSi substrate is improved using Ni-Pt(l%) alloy target. It is believed that Pt incorporation suppressed the oxidation of NiGe and Ni and Ge diffusion. The proposed Ni-Pt/TiN is also efficient in reducing hole barrier height between Ni germanide and source/drain, i.e., decrease of contact resistance therein. The extracted Schottky barrier height...
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