The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Co-sputtering of Ni and Pt was proposed for thermal stable Ge MOSFETs on a Ge-on-Si substrate. The thermal stability of Ni germanide was considerably improved compared to the pure Ni germanide by the co-sputtering of Pt along with Ni, because Pt atoms distributed uniformly in the Ni germanide layer, which suppressed the agglomeration of Ni germanide. Therefore, the proposed Ni-Pt co-sputtering method...
In this paper, novel Ni silicide on boron cluster implanted source/drain junction is proposed and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide (Ni-Pd(5%)/TiN) is compared with pure Ni/TiN structure and the effect of boron cluster on the shallow junction of high performance MOSFETs is characterized.
In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400°C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0.565~0.577 eV and 4.695~4.702 eV, respectively...
Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.