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Well-calibrated predictive TCAD simulations are employed to generate target data for compact models for better pre-V1.0 PDK development. A reliable re-centering technology has been developed which can accurately migrate the global and local variability and the corresponding corners. FinFETs calibrated to published data by Intel at the 14nm technology node are employed as test-bed devices.
Local statistical variability (mismatch) is very important in advanced CMOS technologies critically affecting, among others, SRAM supply and holding voltages, performance and yield. TCAD simulation of statistical variability is essential for identification of variability sources and their control in the technology development and optimization. It also plays an important role in the development of...
We report on a systematic simulation study of the impact of process and statistical variability and reliability on SRAM cell design in a 14nm technology node SOI FinFET transistors. A comprehensive statistical compact modelling strategy is developed for early delivery of a reliable PDK with built-in statistical variability and reliability information. This enables TCAD-based transistor-SRAM co-design...
We report a systematic study on the impact of process and statistical variability on SRAM design in a 14nm SOI FinFET technology node. A comprehensive statistical compact modelling strategy is developed for the early delivery of reliable PDK model, which enables TCAD-based transistor-cell co-design and path finding during the early phase of a technology node.
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