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The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 mu m wavelength and has about the same maximum intensity whatever the host material is. Results of cathodoluminescence from a scanning electron microscope revealed that the 1.54 mu m emission is not uniformly dispersed at the surface...
The influence of the p-type doping level in GaAs on the AuMn specific contact resistivity has been investigated, showing that AuMn could be used as an ohmic contact on epitaxial layers with a very large range of doping levels. The integration of this contact in the processing technology of heterojunction bipolar integrated circuits has been analysed, showing the influence of the processing steps preceding...
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