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In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that, unlike the conventional LOCOS isolation, the new isolation scheme allows the AMO concept to be scaled below 0.6??m geometries. Electrical results are presented for arrays with the new isolation scheme.
This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly capacitor. The single poly EPROM [1] has been adopted to simplify the integration issues; the three modules (EEPROM, EPROM and A/D) can be combined in any combination without affecting their electrical performance.
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