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Charge carrier mobility in disorder materials was described by hopping model and the increasing in the mobility value of existing defect or impurity sites was investigated by Monte Carlo simulation of the rectangular hopping site. In the case of equal tunneling rate, the mobility value increases when the defect sites have higher energy and becomes saturate at the site energy about 1.04 times of the...
In order to investigate the carrier transport in organic semiconductor nanodevices, the hopping model is a powerful method to describe the electrical conduction in the disorder material. The doping or mixing with other material is essential for the conduction mechanism in these organic semiconductor materials. Thus the influence of hopping site mixing was evaluated by Monte Carlo simulation. This...
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