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This paper is for practical design methodology on placement & route (P&R) to fix lithography hotspots. This methodology for block and chip level design consists of lithography simulation and metal routing on physical layout. The lithography simulation as design for manufacturability is very important solution in 45 nm technology and below because of limits of lithography wavelength related...
In this study, we implemented an auto-correction method for layout of 45 nm standard cells to get design-for-manufacturability (DFM) friendly design. The proposed method avoids lithography hotspot and particle defect, which are the source of systematic and random variation, by utilizing litho simulation and critical area analysis during optimization. In addition, to achieve maximum benefit of standard...
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