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Spin-transfer torque random access memory (STT-RAM) has recently gained increased attentions from circuit design and architecture societies. Although STT-RAM offers a good combination of small cell size, nanosecond access time and non-volatility for embedded memory applications, the reliability of STT-RAM is severely impacted by device variations and environmental disturbances. In this paper, we develop...
As the technology scales down, the increased power density brings in significant system reliability issues. Therefore, the temperature monitoring and the induced power management become more and more critical. The thermal fluctuation effects of the recently discovered spintronic memristor make it a promising candidate as a temperature sensing device. In this paper, we carefully analyzed the thermal...
The fourth passive circuit element, memristor, has attracted increased attentions since the first real device was discovered by HP Lab in 2008. Its distinctive characteristic to record the historic profile of the voltage/current through itself creates great potentials in future system design. However, as a nano-scale device, memristor is facing great challenge on process variation control in the manufacturing...
Thermal fluctuation effects on the electric behavior of a spintronic memristor based upon the spin-torque-induced domain-wall motion are explored. Depending upon material, geometry, and electric excitation strength, the device electric behavior can be either sensitive or insensitive to temperature change. We present temperature sensor designs that operate at a temperature sensitive region. The sensitivity...
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