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We report a small aperture 850-nm oxide vertical-cavity surface-emitting laser (VCSEL) operating at 20 Gb/s (pseudorandom bit sequence 31) 25??C-70??C with 5 dB extinction ratio. The VCSEL is designed to target anticipated 20-Gb/s transceiver module requirements, and is fabricated using production equipment including metal-organic chemical vapor deposition reactors for the growth of GaAs-AlGaAs epitaxy...
In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.
In this paper we report 850nm oxide VCSEL operating at up to 25 Gb/s (PRBS31) with 5dB ER, based on a high volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We will also discuss VCSEL characterization results relevant for optical transceiver applications beyond 10Gb/s.
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