The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Gadolinium-silicate (GdSiO) as high-k dielectric in sub 10nm gate first nanowire (NW) nMOSFETs is investigated. NW- and UTB- nMOSFETs with conventional SiO2/Poly-Si gate stacks have been fabricated and compared with GdSiO/TiN NW nMOSFETs. Specific nMOSFETs with multiple NWs in parallel have been used to extract the effective mobility by split-CV method and to eliminate the series resistance to correct...
A FUSI NiSi metal gate technology is used to investigate the scaling potential of high-k epitaxial gadolinium oxide (Gd2O3) down to 0.6 nm equivalent oxide thickness. Thermally stable gate stacks have been realized by TiN electrodes on gadolinium silicate. Work function tuning of mid gap electrodes is achieved by insertion of ultrathin AlN buffer layers. Initial results based on sputtered buffer layers...
In this work we present a gate-first process platform for device integration of gadolinium (Gd) based high-k dielectrics and metal gate electrodes. Epitaxial Gd2O3 and GdSiO high-k layers have been integrated with titanium nitride (TiN) gates. Thermal stability of the gate stacks is investigated in detail. Especially the metal inserted polysilicon approach using TiN enables high temperature processing.
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.