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Today, measurement of 65nm CMOS and 130nm-based SiGe HBTs technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In...
In this paper, the design and use of an in-situ tuner (IST) aiming on-wafer multi-impedance method are presented. The conventional method using off-wafer tuner is limited by the frequency range and has losses between this external Tuner and the device under test (DUT). Here, IST is placed near the DUT to achieve higher |Gamma| and to cancel losses between the impedance generator and the device. The...
In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60...
During past years, High Resistivity (HR) SOI CMOS technology has emerged as a promising one for the integration of RF applications, mainly because of the improvement of passive component related to HR substrate. This paper summarizes, for the first time, an in depth analysis of different optimization scheme suitable for on-chip inductors fabricated on HR substrate, using advanced 65 nm SOI CMOS technology...
This paper presents high-Q and high-inductance-density on-chip inductors made on high resistivity (HR) substrate using STMicroelectronics LP 65 nm SOI CMOS technology with 6 copper metal layers. For the first time, on-chip inductor architectures dedicated to HR SOI CMOS technology are reported and benchmarked with current one used in standard RF CMOS technologies. According to the measurement results,...
Today, measurement of 65 nm CMOS and 130 nm-based SiGe HBTs technologies demonstrate both Ftau (current gain cut-off frequency) and Fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100 nm III-V HEMT. Consequently, the integration of full transceiver at 60 GHz has been achieved both in SiGe bipolar and CMOS technology. In the...
In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of resistivity homogeneity all over the wafer, of 300 mm wafer provided by SOITEC and to offer a benchmarking with well known 200 mm material. For this...
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