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A comprehensive and rigorous computational study at atomic level was performed for various vertical tunneling field-effect transistor (VTFET) structures based on III-V and two-dimensional (2D) materials. The key challenges of VTFETs were found to be induced by device structures and the channel materials' properties. An optimized VTFET structure was proposed to suppress the parasitic tunneling current...
An improved simulation scheme for investigating the performance of nanoscale FETs is developed in this paper. The total current of the MOSFET consists of two main components: thermionic current above the top of barrier of the channel calculated by ballistic approach and tunneling current computed by Wentzel–Kramer–Brillouoin approximation based on a full-complex-band structure. Furthermore, to get...
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