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We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (rhoc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective...
We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2+ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7 eV to 0.34 eV while maintaining a low resistive bulk NiSi, at...
We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO2/high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric...
Two isotropic Mu0 centers are found in 4H Silicon Carbide (SiC) and a total of four Mu0 states are seen in the 6H–SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu0 centers in p-type 6H–SiC from spin precession data at 6T. Low-field results for the diamagnetic fraction imply two ionization steps with energies of 0.21 and...
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