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Embedded silicon germanium (e-SiGe) technology in PMOS source/drain area is a trend for advanced CMOS process development. Especially when device gate length reach 28nm or below, sigma shaped trench in PMOS S/D area along with higher germanium and boron concentrations in the SiGe film are needed to improve PMOS channel hole mobility and device Ion/Ioff performance. However, selective epitaxy of SiGe:B...
Embedded SiGe or SiGe:B (e-SiGe or e-SiGe:B) PMOS source/drain (S/D) is widely used in advanced CMOS technology. However, with germanium (Ge) content increase, it becomes more and more challenging and critical to control defect and stress relaxation. In the present work, a groove-like surface defect of selective epitaxy SiGe was reported, which can be observed both on blanket wafer and device wafer...
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