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Ultraviolet and infrared (UV/IR) dual-band photodetectors based on GaN/AlGaN heterojunction structures are presented. Since the UV/IR dual-band detectors do not respond to solar radiation or another artificial visible lighting, these detectors are highly applicable for tracking and surveillance of targets. A dual-band detector which simultaneously detects UV in the 250 - 360 nm and IR in the 3 - 14...
A heterojunction interfacial workfunction internal photoemission (HEIWIP) based terahertz photodetector with 12 periods of 1.3times1018 cm-3 Si-doped 20 nm GaAs emitter and undoped 80 nm Al0.09Ga0.91As barrier has been presented in this paper. Experimental results show a threshold barrier of ~4 THz (i.e. long wavelength cutoff wavelength lambdac~70 mm) in forward bias operation and ~9 THz (lambdac...
A heterojunction interfacial workfunction internal photoemission (HEIWIP) terahertz detector with ~1times1018cm-3 n-type doped GaAs emitters in a multilayer GaAs/Al0.13Ga0.87 As heterostructure is presented. The detection mechanism is based on free carrier absorption with a broad response extending to ~ 5.26 THz (57 mum), corresponding to an effective workfunction of ~ 21.8 meV, which is much smaller...
Terahertz detection is demonstrated using GaAs/AlxGa1-xAs n-type heterojunction interfacial work function internal photoemission (HEIWIP) detectors. A smaller work function (Delta) needed for terahertz detection can be achieved by using n-doped GaAs emitter and undoped AlxGa1-xAs barrier. A single emitter and a multi emitter n-type GaAs/AlxGa1-xAs HEIWIP detectors were designed, fabricated and characterized...
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