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Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated...
A passive UHF RFID tag LSI in 0.35mum CMOS with 2kb FeRAM enables the 2.9-times higher 32b read-and-write throughput over an EEPROM-based tag. A CMOS full-wave rectifier improves the power efficiency from 16.6% up to 36.6% by lossless internal Vth cancellation and mirror stack architecture. A current-mode ASK demodulator converts the 15% power modulation into linear current signal over a 27dB dynamic...
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