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The improvement of the intrinsic high-frequency performance of emerging transistors is commonly based on reducing electron transit time and it is pursued by either reducing the channel length or employing novel high-electron-mobility materials. For gate-all-around transistors with lateral dimensions much shorter than their length, a careful analysis of the total time-dependent current shows that a...
A full many-particle (beyond the mean-field approximation) electron quantum-transport simulator, which is named BITLLES, is used to analyze the transient current response of resonant tunneling diodes (RTDs). The simulations have been used to test an analytical (free-fitting parameters) small-signal equivalent circuit for RTDs under stable direct-current-biased conditions. The comparison provides an...
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