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This paper describes a new front to back-side metallization process for 3D interconnect applications that require high aspect ratio through silicon vias (TSVs). A new bottom-up copper electroplating process is used to achieve a high aspect ratio vias of 15. First, a local sealing method is used in order to attain 80% of the vias filling with copper. Then a 're-fill' process is used for complete feedthrough...
This paper presents a novel technology for copper electroplating in high aspect ratio silicon vias. The described approach is based on the bottom-up technology with the use of a new specifically designed electroplating holder for local sealing and filling of the vias. The technological steps are described and demonstrated for 20mum wide vias with an aspect ratio of 15. Moreover, a simplified simulation...
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