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We demonstrate the smallest FinFET SRAM cell size of 0.063 μm2 reported to date using optical lithography. The cell is fabricated with contacted gate pitch (CPP) scaled to 80 nm and fin pitch scaled to 40 nm for the first time using a state-of-the-art 300 mm tool set. A unique patterning scheme featuring double-expose, double-etch (DE2) sidewall image transfer (SIT) process is used for fin formation...
FinFET integration challenges and solutions are discussed for the 22 nm node and beyond. Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) technique is addressed. Diamond-shaped epi growth for the raised source-drain (RSD) is proposed to improve parasitic resistance (Rpara) degraded by 3-D structure with thin Si-body. The issue of Vt -mismatch is discussed...
SRAM leakage power is a significan fraction of the total power consumption on a chip. Various system level techniques have been proposed to reduce this leakage-power by reducing (scaling) the supply voltage. SRAM supply voltage scaling reduces the leakage-power, but it increases stored-data failure rate due to commonly known failure mechanisms, for example, soft-errors. This work studies SRAM leakage-power...
We demonstrate 22 nm node technology compatible, fully functional 0.1 mum2 6T-SRAM cell using high-NA immersion lithography and state-of-the-art 300 mm tooling. The cell exhibits a static noise margin (SNM) of 220 mV at Vdd=0.9 V. We also present a 0.09 mum2 cell with SNM of 160 mV at Vdd=0.9 V demonstrating the scalability of the design with the same layout. This is the world's smallest 6T-SRAM cell...
Data retention power gating is a commonly used method for leakage reduction in deep submicron SRAM. However, application of such methods result into reduced stability of the SRAM bitcell. Moreover, reducing supply voltage and increasing process variation put a limitation on such usage in deep submicron processes. Present scheme describes a method to enhance stability while applying such data retention...
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