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Anomalous hot-carrier induced on-resistance (Ron) and drive current degradations were observed in 18 V n-type Drain Extended MOS (DEMOS) devices with various n-type Drain Drift (NDD) implant dosages. Under the same stress conditions, the device with higher NDD dosage while showing a higher substrate current (Isub) results in lower Idsat and ON-resistance (Ron) degradations. Optimal conditions for...