The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We studied the electrical properties of undoped and indium-doped and arsenic-doped CdXHg1−XTe layers with x ≈ 0.3 – 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing...
We investigated the temperature dependences of reverse current of “p-on-n” and “n-on-p” junctions fabricated in Cd0.39Hg0.61Te and Cd0.38Hg0.62 heterostuctures grown by MBE on Si substrates. The experimental data of reverse current through “p-on-n” junction in Arrhenius coordinates described by the diffusion of charge carriers in temperature range 210–330K and carrier generation through the deep level...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.