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The performance of a 700 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 1mS pulse width, 20% duty cycle, it can deliver 700 Watts peak power at 96 volts. More than 50% efficiency and 8.2 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 1.9 watts/mil. Thermal resistance is 0.19degC/W. The junction...
The performance of a state-of-the-art L-band 800- Watts peak power module for pulsed Radar application is described. The NPN silicon bipolar junction transistor chips are designed and fabricated at Microsemi PPG. These packaged transistors are internally matched and are constructed with BeO packages for best heat dissipation. Operating under 300 uS pulse width, 10% duty cycle, the power module delivers...
A 500 W very long-pulse high efficiency BJT power transistor is presented, which operates at 6 mS pulse width, 20% duty cycle and 36 V supply voltage. The output power exceeds 500 Watts; the efficiency is higher than 60%; and power gain is greater than 11dB across 400 MHz to 450 MHz. The die layout, internal impedance matching technique and external impedance matching of the test fixture design is...
The performance of a 1kW push-pull device using state of the art silicon die technology is described. Operating under pulsed RF conditions of 300 mus pulse width, 10% duty cycle, it can deliver 1kW peak power at 40 V, and at 1.1 ms 26% 32 V, it can deliver 500 W peak power. More than 60% efficiency at 450 MHz is attained and 10 dB gain over the bandwidth 400 - 450 MHz is achieved. Thermal resistance...
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