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In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson's equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah's double integral method. The model can be used to study the effect of the different gate voltages, gate...
We have developed analytically a threshold voltage model and explored the threshold voltage roll-off and drain-induced barrier lowering (DIBL) effects for undoped surrounding-gate (SG) MOSFETs. The model is derived by applying the Gauss law by considering an elemental area of the channel rather than using Poisson equation as implemented earlier. For this threshold voltage model, the threshold voltage...
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness...
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