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The low-loss self-driven rectifier we developed requires no external power supply and uses a novel CMOS control circuit that generates the power MOSFET drive signal by boosting the intrinsic body diode voltage drop. The rectifier significantly improved conduction loss - a 47% decrease from intrinsic-body-diode-based conduction loss - during half-wave rectification. It can replace with a common diode...
This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a...
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