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The low-loss self-driven rectifier we developed requires no external power supply and uses a novel CMOS control circuit that generates the power MOSFET drive signal by boosting the intrinsic body diode voltage drop. The rectifier significantly improved conduction loss - a 47% decrease from intrinsic-body-diode-based conduction loss - during half-wave rectification. It can replace with a common diode...
This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a...
We have numerically investigated crosstalk noise between interconnect lines in CMOS RF integrated circuits. Immersed microstrip line (IMSL) and immersed coplanar waveguide (ICPW) over Si substrate were analyzed to make clear shielding effect of grounded planes to reduce crosstalk noise between parallel interconnect lines. It was shown that the crosstalk between the interconnect lines were extensively...
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