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Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices.
Positron emission tomography requires high-brightness fast-decay scintillators for coincidence counting of positron annihilation events. We demonstrate that LaF3:Ce nanocrystals show promising characteristics for that application. Scintillation response and photoluminescence lifetime below 27 ns are measured.
Effects of 137Cs gamma irradiation on photoluminescent properties of CdSe/ZnS colloidal quantum dots are reported. Optical degradation was evaluated by measuring dependence of photoluminescence intensity on irradiation dose. CdSe/ZnS quantum dots show poor radiation hardness.
Consideration of finite planar metal-insulator-metal plasmonic waveguides reveals bound and leaky modes with a spectral gap between them. Antenna mode formed in the leaky radiation region offers both free-space coupling mechanisms and beam steering devices.
The role of metal apertures in lateral-mode confinement in VCSELs is clarified by a detailed effective-frequency-method analysis of an oxide-confined VCSEL structure. The conditions for suppression of higher-order lateral modes using metal apertures are established.
Colloidal synthesis of ZnO nanocrystals (NCs) from zinc alkoxy alkyl precursors in the 1-methyl imidazole/H2O coordinating solvent is reported. The results of NC structural and optical characterization are presented.
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum dot ring lasers with high unidirectionality is reported. The new design suppresses the unwanted counterpropagating modes more effectively than in the previous S-section-racetrack design.
The fabrication of quantum-dot-based optoelectronic integrated circuits incorporating twin ring diode lasers, waveguides, directional couplers, a Y-junction mixer, and photodetectors, is reported. Microwave frequency beating between longitudinal modes from individual ring diode lasers as well as beat notes between integrated twin ring diode lasers are demonstrated.
The optical and microwave spectra of 5-mm-long quantum-dot diode lasers are investigated. Comparison of observed beating lines with quantum-well lasers shows differences in the group index, linewidth, and line shape.
Nonlinear interactions between optical modes in semiconductor lasers and optical amplifiers perturb optical parameters in the vicinity of a strong mode frequency. This effect is considered in terms of slow and fast light propagation.
We report on colloidal synthesis of InP and InN nanocrystals (NCs) from organometallic precursors in a noncoordinating solvent using myristic acid as a ligand. The results of NC structural and optical characterization are presented.
We report fabrication and characterization of light-emitting diodes operating at room temperature with a peak wavelength of ~2.0 mum by using heterostructures of InGaSb/AlGaAsSb quantum wells grown by molecular beam epitaxy on GaSb substrates.
We report on quantum-dot-based optoelectronic integrated circuit incorporating twin ring lasers, waveguides, directional couplers, Y-junction mixer, and photodetectors. Frequency beating between integrated quantum-dot ring lasers is demonstrated for the first time.
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