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A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
In this work we used a V-cavity VECSEL with InGaAs quantum-well-based gain and semiconductor saturable absorber mirror structures as described in S. Hoogland et al.(2005): an overall cavity length of 25 mm conferred a fundamental pulse repetition frequency of 5.9908 GHz, and the VECSEL emitted 1-ps pulses in a stable passively mode-locked train with 40 mW average power. Pulses from the VECSEL were...
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