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High power testing methods for HV DC circuit breaker (DCCB) were investigated. Short circuit breaking tests using quasi-DC current were performed for DCCB based on the current oscillation scheme with active current injection. This DCCB has a high voltage vacuum circuit breaker as the interrupter unit. The tests were performed using two kinds of testing method (power frequency current peak method and...
An HVDC grid will be required to avoid DC voltage collapse and operate the healthy lines continuously, even if a DC fault occurs at the remote end. Rapid fault clearing is essential for DC Circuit Breaker (DCCB) even though the requirement varies depending on DC transmission system configurations, Voltage Source Converter (VSC) design, transmission capacity, and DC reactor connected in series with...
This paper presents a CMOS voltage controlled oscillator (VCO) with a high-Q inductor fabricated by using a commercial wafer-level-package (WLP) technology. A new topology suitable for CMOS VCOs with high-Q WLP inductors is proposed. Measured Q of a WLP inductor is 40 in differential mode at around 1.9 GHz. A phase noise is -134.4 dBc/Hz at a 1 MHz offset for 1.9 GHz carrier frequency, and a FoM is...
This paper presents a low noise amplifier (LNA) with high-Q inductors in a wafer-level chip-scale package (WL-CSP) process. Q-factor of inductors has big impacts on characteristics of LNAs, thus we investigate availability of WL-CSP high-Q inductors. A common-source LNA with inductive degeneration is used for discussion. The 5.2 GHz LNA with WL-CSP inductors provides a noise figure of 1.7 dB which...
This paper presents a feasibility study on VCO using RF SiP technology, which is an RF application of stacked SiP. An off-chip inductor is implemented in a separated chip, and measured Q factor is 130. A phase noise is -119 dBc/Hz at 1 MHz offset for a 5.84-GHz carrier frequency, and frequency tuning range is 5.73 GHz-5.95 GHz. Power consumption is 1.93 mW, and 180 nm CMOS process is utilized. FOM...
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