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Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge1_ySny indicating the possibility of widespread applications of Ge-based photonic devices. The pseudomorphic nature of the Ge-based alloy layer on a substrate is important to keep dislocation...
Germanium-based photonics or photovoltaics applications require precise knowledge of the optical constants (refractive index, absorption coefficient, dielectric function) for Ge and GeO2 over a broad spectral range. Unfortunately, we don't know as much about these as for Si and SiO2. We therefore apply the same technique to Ge (spectroscopic ellipsometry with multi-sample analysis), which was used...
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45 nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380 nm to 190 nm poly-pitches.
We report a CMOS-compatible embedded silicon-carbon (eSiC) source/drain stressor technology with NMOS performance enhancement. The integration includes up to 2.6% substitutional carbon (Csub) epitaxial Si:C and laser spike annealing (LSA) for increased Csub incorporation. 26% channel resistance (Rch) reduction and 11% Idlin-Ioff enhancement for 0.5% Csub and 60% Rch reduction for 2.2% Csub are demonstrated.
The semiconductor industry has maintained its historical exponential improvement in performance by aggressively scaling transistor dimensions. However, as devices approach sub-100-nm dimensions, scaling becomes more challenging and new materials are required to overcome the fundamental physical limitations imposed by existing materials. For example, as power supply voltages continue to decrease with...
The optical properties (complex dielectric function) and critical-point parameters for Si1-yCy alloys with high substitutional C content grown pseudomorphically on Si (001) were determined. These data are useful for process control (if such alloys are used in CMOS processing), for example using spectroscopic ellipsometry to determine film thickness, modulation spectroscopy (especially photoreflectance)...
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