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For chip-scale interconnection, 4 times 12 vertical-cavity surface-emitting laser (VCSEL) arrays have been optimized. Each flip-chip bondable bottom-emitting oxide-confined 985 nm VCSEL have integrated backside lenses, and is capable of modulation at >20 Gb/s with a low current density of only 9.9 kA/cm2. An aggregate data rate of 960 Gb/s was obtained from a chip area of only 1.4 mm times 3.75...
Novel active semiconductor microdisk switching devices are demonstrated. The devices utilize a free carrier injection (FCI) active region to tune the resonant frequency, and electroabsorption and gain active regions to change the quality factor of the cavity
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