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In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson's equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah's double integral method. The model can be used to study the effect of the different gate voltages, gate...
This paper presents a compact threshold voltage model for narrow channel MOSFETs for the purpose of VLSI circuit simulation. A nano-scale trench isolated MOSFET has been considered whose gate length and width are in the sub 65 nm regime. The developed model has been validated by comparing the results predicted from the derived model with those obtained using the device simulator of TCAD Sentaurus.
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