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Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
In this study a metal oxide semiconductor (MOS) structure has been proposed using single walled semiconducting carbon nanotube (SWCNT) as floating gate and high-k dielectric Hafnium Aluminate (HfAlO) as tunnel and control oxide. This composite gate dielectric shows a low gate leakage current which is generally a direct tunneling current. To evaluate this direct tunneling current two important parameters...
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