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Analog circuits based on the subthreshold operation of CMOS devices are very attractive for ultralow power, high gain, and moderate frequency applications. In this paper, the analog performance of 100 nm dual-material gate (DMG) CMOS devices in the subthreshold regime of operation is reported for the first time. The analog performance parameters, namely drain-current (Id), transconductance (gm), transconductance...
Subthreshold analog operation of CMOS devices are very attractive in terms of both very low power dissipation and high voltage gain. In this paper, a systematic investigation, with the help of extensive process and device simulations, of the effects of halo doping [both double-halo (DH) and single-halo (SH) or lateral asymmetric channel (LAC)] on the subthreshold analog performance of 100 nm SOI CMOS...
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