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We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.
We report real-time SER characterization of CMOS 65nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130nm technology.
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