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We present both heavy ion and alpha test results for SPARCV8 pipelined-microprocessors fabricated in a space CMOS 65nm platform. Two design implementations, standard and radiation-hardened, are compared at 50/300MHz and 0.8V/1.2V. The dominant failure modes are identified and the failure cross-section is compared with fault injection prediction.
Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase...
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI...
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