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Application of passive voltage contrast at low kV is well-known methodology to identify fault location. In this paper, PVC with high-energy beam instead of at low kV has been performed to one 65 nm technology case and successfully reveals PMOS contact open. The phenomenon and modelling will be further discussed.
In this paper, pad contamination sources were summarized and several cases were studied. The fluorine on bond pad was introduced through top metal etch/pad opening process per etch gases or shipping related issue. The higher carbon and oxygen on the abnormal pad were introduced during the process of backside grinding in case.1. The package paper during shipping caused the oxygen and kalium contamination...
Semiconductor manufacturing process is becoming more and more complex while manufacturing technology is developed to deep sub-micron region. Therefore, more and more company is turning to capital-light and focusing on core business. Foundry is the player usually providing silicon manufacturing service to customers. According to customer's capital-light strategy, foundries are required to provide more...
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