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We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n+ source/gate edge. Furthermore, in terms of the BTI degradation...
This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the...
We develop the new PTD device named `TOP counter', which is a kind of RICH detectors and detects the ring image converted to the position and the propagation time. For the timing measurement, about 40 [ps] TTS is required for the photo-detector. Though the square-shaped MCP-PMT which we developed is the best candidate for the TOP counter, we have had a problem on its lifetime span. In this presentation,...
An all-optical sampling-based Q-factor monitor applicable to multi-bitrated and formatted signals was successfully demonstrated in a network testbed. Quality of GMPLS lightpaths could be diagnosed correlating the actually measured BER.
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