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This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs to improve dc-to-rf conversion efficiency. A 2nd harmonic input tuning circuit is incorporated into each unit on-chip FET cell and realizes high precise control of 2nd harmonic input impedance. In addition, 2nd and 3rd harmonic output impedances...
This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the shunt pHEMT resonator, which is reduced on-state resistance of FET, is proposed. The developed V-band SPDT switch shows an isolation of over 45 dB and an insertion loss of 1.4 dB at 60 GHz. Input and output return losses are better than 18 dB...
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave amplifiers, is presented. According to the nonlinear drain resistance model previously proposed, we have adopted a "Stepped Recess" structure, which includes a GaAs buried layer 150 nm thick to reduce the nonlinear drain resistance and a recessed area at the gate side to...
The effect of an input harmonic termination on a HBT was investigated by simulation and waveform measurement. It was found that the best phase of the input reflection coefficient in the 2nd harmonic(??s2fo) for high efficiency is from 180 to 240 degrees in class F operation. The best phase increases in accordance with the decrease of |??s2fo|. The relationship between the best phase of ??s2fo and...
The optimization of the operating bias condition and input harmonic termination is investigated for the practical circuit design of high efficiency inverse class-F amplifiers. It is found that inverse class-F amplifiers exhibit a high efficiency at the quiescent current of larger than 10% Idss, which cannot be achieved by class-F amplifiers. It is also revealed that the efficiency of inverse class-F...
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