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Traps have been identified in epitaxial n- and p-type In1?xGaxAsyP1?y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In0.53Ga0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type...
Three different conduction states, with typical impedances of 1010 ?, 50 k? and 3 k?, have been found in hetero-junctions prepared by evaporation of the II-VI compound. A switching phenomena, with memory, is found to occur between two of the conduction states. The switching sequence is rapid (< 30 ns), and is found in junctions prepared from epitaxial and polycrystalline zinc selenide. The effect...
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