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Fe-doped semi-insulating samples of InP have been implanted at room temperature and liquid nitrogen temperature at 200 KV with phosphorous. A fluence of 5 ? 1014/cm2 was sufficient to render the lattice amorphous as determined by Rutherford backscattering techniques. Successful reconstruction of the damaged lattice was achieved using a 400?C anneal for 24 h on samples implanted at liquid nitrogen...
Very-high-purity l.p.e. InP layers with a ?77 of 67 000cm2/Vs and an n77 of 1.1 ? 1015 cm?3, virtually uncompensated, having a low freeze-out ratio of 1.03, and with continuous surfaces with terraces but no inclusions, have been successfully grown, after the residual silicon donor in the melt has been baked away in H2 with trace amounts of H2O.
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