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<para> Operation properties of polysilicon–oxide–nitride–oxide–silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%–28% in the HfAlO trapping layer. In addition, high-speed...
Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.
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