The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, results obtained on nickel silicidation and nickel−platinum silicidation in a RTA system based on conductive heating are presented. It is shown that with the Levitor system, it is possible to obtain silicide uniformities <1% at temperatures as low as 240°C. Next to these, within-wafer results, run-to-run uniformity results are presented. The run-to-run results, monitored over 18...
The Ni-silicide phase formation in FUSI gates was investigated comparing soak and spike anneals for the first RTP step. From both physical analysis on blanket wafers and electrical measurements on nMOS FUSI/HfSiON device it is found that the RTP1 temperature process window (PW) to obtain NiSi or Ni3Si2 at the FUSI/dielectric interface is significantly widened for spike anneals (30degC < PW <...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.