The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The detection principle, process integration and system architecture of a novel 90-nm CMOS-based mixed-signal capacitive biosensor with 256 × 256 densely packed nano-electrodes are presented. The sensor operates at modulation frequencies up to 200 MHz, and has on-chip temperature sensors, A/D converters and digital I/O. Brownian motion of nanobeads over the sensor surface has been recorded in real...
The Ni-silicide phase formation in FUSI gates was investigated comparing soak and spike anneals for the first RTP step. From both physical analysis on blanket wafers and electrical measurements on nMOS FUSI/HfSiON device it is found that the RTP1 temperature process window (PW) to obtain NiSi or Ni3Si2 at the FUSI/dielectric interface is significantly widened for spike anneals (30degC < PW <...
The thermal stability of Pt and C doped Ni-silicide films was studied. For Ni(Pt)Si layers the addition of e.g. 10% of Pt to the Ni sputtering target results in an improvement of the thermal stability of the Ni(Pt)Si up to 750degC (30 s). Recently, it was discovered that the addition of C to the NiSi film has an even larger effect. The end result is a C-doped NiSi film with a remarkable thermal stability...
Spike anneals based on radiation and conduction heating are carried out on silicon wafers with 12xl2mm2 patterned areas; these areas are covered with trenches with varying dimensions, thermally isolated from each other by large unpatterned silicon areas. The width of the trenches varies from 150-4500nm; the depths are 400 and 800nm. It is found that lamp-based heating with heatrup rates varying from...
It has been shown that for radiative heating systems, 3D patterns have a strong influence on local wafer temperatures during anneal. Since the temperature gradients on the wafer increase with increasing heat up rates and aspect ratios, the importance of these effects is expected to grow when changing to future technology nodes. For conductive heating systems the effect of the 3D patterns is negligible.
High dopant activation and low implant damage are crucial in realizing the formation of a low resistivity ultra shallow junction (USJ). Future annealing process requires diffusion less activation and has ultimately define the junction depth. Conventional boron implant at ultra-low energies perform poorly in throughput and in energy contamination. Molecular species (B18H22) can provide implants with...
Solid phase epitaxial regrowth (SPER) has been re-evaluated using molecular boron implantation techniques (B18H22) for the purpose of source/drain extensions as well as for the NFET's halo implants. It had been found that reverse annealing can be omitted. The well documented benefits of fast ramp spike temperature profiles allow the use of highly activating anneals above 800degC without significant...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.