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A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact...
New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case of sufficiently high gate voltage, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension resulting in impact ionization at the source as well as drain junctions...
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