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This paper highlights the output current saturation in a line tunneling-based tunnel FET (LT-TFET). Thereafter, a novel method to extract the onset of saturation voltage (${V}_{\textsf {DSAT}}$ ) for LT-TFET is proposed for the first time. A soft saturation state is attained when the electron density in the epitaxial layer over the source region saturates with the drain bias (${V}_{\textsf {DS}}$ ...
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