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We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel configuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.
In this paper, we present the design, fabrication, and characterization of a novel UV photodetector with a cutoff wavelength of 300 nm without utilizing AlGaN-based junctions or multilayer optical filters. The active region of the device consists of a pair of Ni/GaN Schottky junctions connected in antiparallel configuration. Each junction, by itself, exhibits a cutoff wavelength of 360 nm-characteristic...
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