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This paper presents a novel memory cell design as a variant of Lior Atias' 13T cell (mentioned as LA13T cell in this paper) for low-voltage operation and ultra-low power space applications. Using C-element as a replacement of dual-driven inverters in the LA13T cell, our proposed radiation hardened by design memory cell (referred to as RHD13T) can effectively block the unwanted paths from Vdd to Gnd...
In this paper, single-event upset (SEU) is predicted using a combination of technology computer aided design (TCAD) and Geant4 Monte Carlo simulations. According to the layout topology of a 65 nm complementary metal-oxide-semiconductor (CMOS) static random access memory (SRAM) arrays, the sensitive volumes (SVs) of off and on-transistors were calibrated by TCAD using novel circuit schematics. The...
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