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A highly manufacturable embedded DRAM technology at 40 nm node is presented. This report provides the characterization data of 128 Mbit embedded DRAM test vehicle fabricated by 40 nm eDRAM 200 MHz low power process. The test vehicle is composed of 32 macros and each macro unit is 4 Mb with configuration 32 k × 128 bits. The process is cost effective and compatible to our low power Logic core process...
Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs,...
A combined linear and delta-modulated (DeltaM) switch-mode PA supply modulator for polar transmitters in wireless handsets is designed in a 0.25 mum CMOS process. The modulator employs a DeltaM switch-mode DC-DC buck converter to enhance the efficiency of a linear regulator at backed-off supply voltages and powers. The delta-modulator's noise-shaping characteristic, linear regulator's power supply...
High power consumption will shorten battery life for handheld devices and cause thermal and reliability problems. One way to lower the dynamic power consumption is to reduce the supply voltage. Multi-supply voltage (MSV) is introduced to provide higher flexibility in controlling the power and performance trade-off. In region-based MSV, circuits are partitioned into "voltage islands" where...
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