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The channel length of the next generation semiconductor device is 10 nm or less. In general, a pn junction is necessary for FETs, but it is difficult to make the p-n junction to 10 nm or less depending on the concentration gradient relationship. Further, variations in the impurity concentration between the devices cause a problem. For this reason, FETs using intrinsic semiconductors for the channel...
Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm are fabricated and demonstrated. The anisotropic wet etching of a silicon-on-insulator (SOI) substrate was utilized to form V-grooves and to define nanometer-scale channel. Metal NPs are selectively placed onto bottom of V-groove using the Bio nano process (BNP). The JL-FET is applied to floating...
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