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A next generation of AESA antennas will be challenged with the need for lower size, weight, power and cost (SWAP-C). This leads to enhanced demands especially with regard to the integration density of the RF-part inside a T/R module. The semiconductor material GaN has proven its capacity for high power amplifiers, robust receive components as well as switch components for separation of transmit and...
Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a frequency of 18GHz. A number of measurements have...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
After many years of development the active electronically scanned array (AESA) radar technology has reached a mature technology level. Many of today's and future radar systems will be equipped with the ASEA technology. T/R-modules are key elements in active phased array antennas for radar and electronic warfare applications. Meanwhile T/R-modules using GaAs MMICs are in mass production with high quantities...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the...
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output...
High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains. Based on hybrid designs excellent peak power levels of 23 W (43.6 dBm)...
AlGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper. The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB...
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